![]() ![]() ![]() MOCVD reaction of trimethylgallium and arsine: Ga(CH.VPE reaction of gaseous gallium metal and arsenic trichloride: 2 Ga + 2 AsCl.Most GaAs wafers are produced using this process.Īlternative methods for producing films of GaAs include: Liquid encapsulated Czochralski (LEC) growth is used for producing high-purity single crystals that can exhibit semi-insulating characteristics (see below). ![]() Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace.The vertical gradient freeze (VGF) process.Gallium arsenide single crystals can be prepared by three industrial processes: In the compound, gallium has a +3 oxidation state. 3.4 Fiber optic temperature measurement.3.2.1 Future outlook of GaAs solar cells.2.2 Comparison with silicon for electronics. ![]()
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